名称：高纯 TiSe2 （1g）
晶体种类： 半金属，红外材料，超导材料
纯度： >99.999 %
表征方法： EDS，SEM，Raman
bandgap： 0 eV
注意事项： 表面容易氧化

参考文献

1,Wang, Hong, et al. "Large‐Area Atomic Layers of the Charge‐Density‐Wave Conductor TiSe2." Advanced Materials 30.8 (2018): 1704382.

2, Hellgren, Maria, et al. "Critical role of the exchange interaction for the electronic structure and charge-density-wave formation in TiSe 2." Physical review letters 119.17 (2017): 176401.

3,Singh, Bahadur, et al. "Stable charge density wave phase in a 1 T–TiSe 2 monolayer." Physical Review B 95.24 (2017): 245136.

4,Campbell, Daniel J., et al. "Intrinsic insulating ground state in transition metal dichalcogenide TiSe 2." Physical Review Materials 3.5 (2019): 053402.