名称：高纯 ZrS2 （1g）
晶体种类： 半导体，红外半导体，拓扑材料，热电材料
纯度： >99.999 %
表征方法： EDS，SEM，Raman
bandgap： 1 eV

1， Lv, H. Y., et al. "Strain-induced enhancement in the thermoelectric performance of a ZrS 2 monolayer." Journal of Materials Chemistry C 4.20 (2016): 4538-4545.

2，Zhang, Xirui, et al. "Efficient band structure tuning, charge separation, and visible-light response in ZrS 2-based van der Waals heterostructures." Energy & Environmental Science 9.3 (2016): 841-849.

3， Mattinen, Miika, et al. "Atomic layer deposition of emerging 2D semiconductors, HfS2 and ZrS2, for optoelectronics." Chemistry of Materials 31.15 (2019): 5713-5724.

4，Tanthirige, Rukshan M., et al. "Intrinsic Photoconductivity of few-layered ZrS2 Phototransistors via Multiterminal Measurements." Semiconductor Science and Information Devices 1.2 (2020).