Name: High purity TiSe2 (1g)
Crystal type: semi-metal, infrared material, superconducting material
Purity: >99.999%
Characterization method: EDS, SEM, Raman
bandgap: 0 eV
Note: The surface is easy to oxidize
1,Wang, Hong, et al. "Large‐Area Atomic Layers of the Charge‐Density‐Wave Conductor TiSe2." Advanced Materials 30.8 (2018): 1704382.
2, Hellgren, Maria, et al. "Critical role of the exchange interaction for the electronic structure and charge-density-wave formation in TiSe 2." Physical review letters 119.17 (2017): 176401.
3,Singh, Bahadur, et al. "Stable charge density wave phase in a 1 T–TiSe 2 monolayer." Physical Review B 95.24 (2017): 245136.
4,Campbell, Daniel J., et al. "Intrinsic insulating ground state in transition metal dichalcogenide TiSe 2." Physical Review Materials 3.5 (2019): 053402.
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BK2020072816-01 | BK2020072816 | 高纯 | 100 | $108 | |||
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