Titanium disilicide TiSi2

product information:
Name: Titanium disilicide
Purity: ≥99.5 single phase
Particle size: D50: 5~10 microns


Molecular formula: TiSi2


Appearance: gray-black


Density: 4.39g/cm3


Molecular weight: 104.04

Application: Titanium silicide is widely used in the manufacture of metal oxide semiconductor (MOS), metal oxide semiconductor field effect transistor/(MOSFET) and dynamic random access memory (DRAM) gate, source/drain, interconnection and ohmic contact.

Titanium silicide performance: excellent in high temperature oxidation resistance, used as a heat-resistant material, high-temperature heating element, etc.


Titanium silicide is widely used in the manufacture of metal oxide semiconductor (MOS), metal oxide semiconductor field effect transistor (MOSFET) and dynamic random access memory (DRAM) gate, source/drain, interconnection and ohmic contact. Examples of its application as follows:


1) A titanium silicide barrier layer is prepared. The device using the method for manufacturing the titanium silicide barrier layer includes a non-silicide area and a silicide area separated by isolation regions, and the upper surface of the device is covered with a sacrificial oxide layer.


2) Preparation-an in-situ synthesis of titanium silicide (Ti5Si3) particle reinforced aluminum titanium carbide (Ti3A1C2)-based composite material.


The invention can prepare aluminum titanium carbide/titanium silicide composite material with high purity and high strength at a lower temperature and a shorter time. 3) Preparation of composite functional titanium silicide coated glass. Deposit a thin film on the ordinary float glass substrate or deposit another silicon thin film between them.


By preparing a composite film of titanium silicide and silicon or adding a small amount of active carbon or nitrogen to the film to obtain a composite film of titanium silicide composite silicon carbide or titanium carbide or titanium silicide composite silicon nitride or titanium nitride, the The mechanical strength and chemical resistance of coated glass are improved.


The present invention is a new type of coated glass that combines the functions of dimming, heat insulation and low-emissivity glass.


4) Preparation of a semiconductor element, including a silicon substrate on which a gate, source and drain are formed, and the gate and the silicon substrate are formed


An insulating layer is formed, and the gate is composed of a polysilicon layer on the insulating layer and a titanium silicide layer on the polysilicon layer, which is formed on the titanium silicide layer


There is a protective layer, the protective layer, the titanium silicide layer, the polysilicon layer and the insulating layer are surrounded by a three-layer structure layer, from the inside to the outside, the silicon nitride


The gap wall layer, the affinity layer and the silicon oxide gap wall layer, the source and drain are formed with a titanium silicide layer, and an inner dielectric layer is formed on the silicon substrate.


A contact window opening is formed in the dielectric layer. The utility model adopts the above technical scheme to make the grid and the wire in the contact window


It can be completely insulated without short circuit.