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二维材料微纳加工-原位测试
二维材料转移系统 异质结定制 定制硅片耗材 微纳器件
电极定制 瞬态吸收光谱 单晶硅基片 氮化镓晶片
FET器件 二维材料器件 设计加工 光电综合测试系统
光电流测试系统 光谱测试系统
价格区间
500元    501-1000元    1001-2000元    2000元以上

图片 编号/CAS号 货号 名称/规格 价格

4英寸氮化镓厚膜晶片(非掺杂) BK2020081710
  4英寸氮化镓厚膜晶片(非掺杂)
BK2020081710-02 20±2μm
BK2020081710-01 4.5±0.5μm
¥3960
非极性/半极性氮化镓自支撑衬底(SP面) BK2020081709
  非极性/半极性氮化镓自支撑衬底(SP面)
BK2020081709-04 Semi-insulating5*20.5mm2
BK2020081709-03 Semi-insulating5*10.5mm2
BK2020081709-02 Un-doped5*20.5mm2
BK2020081709-01 Un-doped5*10.5mm2
¥3600
非极性/半极性氮化镓自支撑衬底(M面) BK2020081708
  非极性/半极性氮化镓自支撑衬底(M面)
BK2020081708-04 Semi-insulating5*20.5mm2
BK2020081708-03 Semi-insulating5*10.5mm2
BK2020081708-02 Un-doped5*20.5mm2
BK2020081708-01 Un-doped5*10.5mm2
¥3600
非极性/半极性氮化镓自支撑衬底(A面) BK2020081707
  非极性/半极性氮化镓自支撑衬底(A面)
BK2020081707-04 Semi-insulating5*20.5mm2
BK2020081707-03 Semi-insulating5*10.5mm2
BK2020081707-02 Un-doped5*20.5mm2
BK2020081707-01 Un-doped5*10.5mm2
¥3600
10×10.5mm2氮化镓自支撑晶片(Fe掺杂) BK2020081706
  10×10.5mm2氮化镓自支撑晶片(Fe掺杂)
BK2020081706-09 Double-抛光位错密度:1~5 x 105 cm-2
BK2020081706-08 Double-抛光位错密度:5~9 x 105 cm-2
BK2020081706-07 Double-抛光位错密度:1~3 x 106 cm-2
BK2020081706-06 N-抛光位错密度:1~5 x 105 cm-2
BK2020081706-05 N-抛光位错密度:5~9 x 105 cm-2
BK2020081706-04 N-抛光位错密度:1~3 x 106 cm-2
BK2020081706-03 Ga-抛光位错密度:1~5 x 105 cm-2
BK2020081706-02 Ga-抛光位错密度:5~9 x 105 cm-2
BK2020081706-01 Ga-抛光位错密度:1~3 x 106 cm-2
¥2340
10×10.5mm2氮化镓自支撑晶片(Si掺杂) BK2020081705
  10×10.5mm2氮化镓自支撑晶片(Si掺杂)
BK2020081705-09 Double-抛光位错密度:1~5 x 105 cm-2
BK2020081705-08 Double-抛光位错密度:5~9 x 105 cm-2
BK2020081705-07 Double-抛光位错密度:1~3 x 106 cm-2
BK2020081705-06 N-抛光位错密度:1~5 x 105 cm-2
BK2020081705-05 N-抛光位错密度:5~9 x 105 cm-2
BK2020081705-04 N-抛光位错密度:1~3 x 106 cm-2
BK2020081705-03 Ga-抛光位错密度:1~5 x 105 cm-2
BK2020081705-02 Ga-抛光位错密度:5~9 x 105 cm-2
BK2020081705-01 Ga-抛光位错密度:1~3 x 106 cm-2
¥2340
10×10.5mm2氮化镓自支撑晶片(非掺杂) BK2020081704
  10×10.5mm2氮化镓自支撑晶片(非掺杂)
BK2020081704-09 Double-抛光位错密度:1~5 x 105 cm-2
BK2020081704-08 Double-抛光位错密度:5~9 x 105 cm-2
BK2020081704-07 Double-抛光位错密度:1~3 x 106 cm-2
BK2020081704-06 N-抛光位错密度:1~5 x 105 cm-2
BK2020081704-05 N-抛光位错密度:5~9 x 105 cm-2
BK2020081704-04 N-抛光位错密度:1~3 x 106 cm-2
BK2020081704-03 Ga-抛光位错密度:1~5 x 105 cm-2
BK2020081704-02 Ga-抛光位错密度:5~9 x 105 cm-2
BK2020081704-01 Ga-抛光位错密度:1~3 x 106 cm-2
¥1800
2英寸氮化镓自支撑晶片 (Fe掺杂) BK2020081703
  2英寸氮化镓自支撑晶片 (Fe掺杂)
BK2020081703-18 Double-抛光等级:A-2
BK2020081703-17 Double-抛光等级:A-1
BK2020081703-16 Double-抛光等级:S-2
BK2020081703-15 Double-抛光等级:S-1
BK2020081703-14 Double-抛光等级:C
BK2020081703-13 Double-抛光等级:B
BK2020081703-12 N-抛光等级:A-2
BK2020081703-11 N-抛光等级:A-1
BK2020081703-10 N-抛光等级:S-2
BK2020081703-09 N-抛光等级:S-1
BK2020081703-08 N-抛光等级:C
BK2020081703-07 N-抛光等级:B
BK2020081703-06 Ga-抛光等级:A-2
BK2020081703-05 Ga-抛光等级:A-1
BK2020081703-04 Ga-抛光等级:S-2
BK2020081703-03 Ga-抛光等级:S-1
BK2020081703-02 Ga-抛光等级:C
BK2020081703-01 Ga-抛光等级:B
¥9999
2英寸氮化镓自支撑晶片 (Si掺杂) BK2020081702
  2英寸氮化镓自支撑晶片 (Si掺杂)
BK2020081702-18 Double-抛光等级:A-2
BK2020081702-17 Double-抛光等级:A-1
BK2020081702-16 Double-抛光等级:S-2
BK2020081702-15 Double-抛光等级:S-1
BK2020081702-14 Double-抛光等级:C
BK2020081702-13 Double-抛光等级:B
BK2020081702-12 N-抛光等级:A-2
BK2020081702-11 N-抛光等级:A-1
BK2020081702-10 N-抛光等级:S-2
BK2020081702-09 N-抛光等级:S-1
BK2020081702-08 N-抛光等级:C
BK2020081702-07 N-抛光等级:B
BK2020081702-06 Ga-抛光等级:A-2
BK2020081702-05 Ga-抛光等级:A-1
BK2020081702-04 Ga-抛光等级:S-2
BK2020081702-03 Ga-抛光等级:S-1
BK2020081702-02 Ga-抛光等级:C
BK2020081702-01 Ga-抛光等级:B
¥9999
2英寸氮化镓自支撑晶片 (非掺杂) BK2020081701
  2英寸氮化镓自支撑晶片 (非掺杂)
BK2020081701-18 Double-抛光等级:A-1
BK2020081701-17 Double-抛光等级:S-2
BK2020081701-16 Double-抛光等级:S-1
BK2020081701-15 Double-抛光等级:A-2
BK2020081701-14 Double-抛光等级:C
BK2020081701-13 Double-抛光等级:B
BK2020081701-12 N-抛光等级:A-1
BK2020081701-11 N-抛光等级:S-2
BK2020081701-10 N-抛光等级:S-1
BK2020081701-09 N-抛光等级:A-2
BK2020081701-08 N-抛光等级:C
BK2020081701-07 N-抛光等级:B
BK2020081701-06 Ga-抛光等级:A-1
BK2020081701-05 Ga-抛光等级:S-2
BK2020081701-04 Ga-抛光等级:S-1
BK2020081701-03 Ga-抛光等级:A-2
BK2020081701-02 Ga-抛光等级:C
BK2020081701-01 Ga-抛光等级:B
¥9999
TSV通孔 BK20200001
  TSV通孔
询价
PDMS工艺 BK20200002
  PDMS工艺
询价

 

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