2-inch GaN self-supporting wafer (undoped)

Excellent level (S)

Production level (A)

Research level (B)

Dummy level (C)

Note:
(1) Useable area: edge and macro defects exclusion
(2) 3 points: the miscut angles of positions (2, 4, 5) are 0.35 ± 0.15°

S-1

S-2

A-1

A-2

Dimension

50.8 ± 1 mm

Thickness

350 ± 25 μm

Orientation flat

(1-100) ± 0.5°, 16 ± 1 mm

Secondary orientation flat

(11-20) ± 3°, 8 ± 1 mm

Resistivity (300K)

< 0.5 Ω·cm for N-type (Undoped; GaN-FS-C-U-C50)

TTV

≤ 15 μm

BOW

≤ 20 μm

≤ 40 μm

Ga face surface roughness

< 0.2 nm (polished)
or < 0.3 nm (polished and surface treatment for epitaxy)

N face surface roughness

0.5 ~1.5 μm
option: 1~3 nm (fine ground); < 0.2 nm (polished)

Package

Packaged in a cleanroom in single wafer container

Useable area

> 90%

>80%

>70%

Dislocation density

<9.9x10⁵ cm^-2

<3x10⁶ cm^-2

<9.9x10⁵ cm^-2

<3x10⁶ cm^-2

<3x10⁶ cm^-2

Orientation：C plane (0001) off angle toward M-axis

0.35 ± 0.15°(3 points)

0.35 ± 0.15°(3 points)

0.35 ± 0.15°(3 points)

Macro defect density (hole)

0 cm

< 0.3 cm^-2

< 1 cm^-2

Max size of macro defects

< 700 μm

< 2000 μm

< 4000 μm