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MoS2 FET, Molybdenum Disulfide Transistor, Monolayer Molybdenum Disulfide Transistor





ID:BK2022062009
CAS:
price: $562
Item ID:BK2022062009
specification:
Detailed

Device structure: conductive silicon wafer/300nm silicon oxide layer/triangular MoS2 or hand-tear single-layer MoS2/Au+Cr+Au electrode


Sample example

1) Mechanical lift-off of single-layer MoS2 back-gate FET (single-layer, 5um wide channel, 300nm silicon oxide substrate)


2) Mechanical lift-off few-layer MoS2 back-gate FET (~3 layers, 5um wide channel, 300nm silicon oxide substrate)


3) Mechanical lift-off of multilayer MoS2 back-gate FET (~5 layers, 5um wide channel, 300nm silicon oxide substrate)


4) CVD triangular MoS2 single crystal, back gate FET (single layer, 5um wide channel, 300nm silicon oxide wafer)


器件结构:   导电硅片/300nm 氧化硅层/三角MoS2 或者手撕单层MoS2/Au+Cr+Au电极











Warm tip: the products supplied by Beijing Beike Xincai Technology Co., Ltd. are only used for scientific research, not for human body

Item ID CAS ID Pack Parameter Stock Make up Price
BK2022062009 BK2022062009 一片装 100 $562
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