Product number | GaN-FS-C-U-S10 |
Size | 10×10.5mm2 |
Thickness | 350±25μm |
Crystal orientation | C-plane(0001)off angle toward M-Axis 0.35°±0.15° |
TTV | ≤10μm |
Curvature | ≤10μm |
Conductivity type | N-type |
Resistivity (300 K) | < 0.1Ω·cm |
Dislocation density | From 1x105 to 3x106cm-2 |
Effective area | >90% |
Polished |
Front Surface:Ra<0.2 nm(polished); or <0.3nm(polished and surface treatment for epitaxy) |
Back Surface:0.5~1.5μm; option:1-3nm(Fine ground);<0.2nm(polished) |
|
package |
Packaged in a class 100 clean room environment, in single container,under a nitrogen atmosphere. |
Warm tip: the products supplied by Beijing Beike Xincai Technology Co., Ltd. are only used for scientific research, not for human body |
Item ID | CAS | ID | Pack | Parameter | Stock | Make up | Price |
BK2020081704-01 | BK2020081704 | Ga-抛光 | 位错密度:1~3 x 106 cm-2 | 100 | $300 | ||
BK2020081704-02 | BK2020081704 | Ga-抛光 | 位错密度:5~9 x 105 cm-2 | 100 | $400 | ||
BK2020081704-03 | BK2020081704 | Ga-抛光 | 位错密度:1~5 x 105 cm-2 | 100 | $700 | ||
BK2020081704-04 | BK2020081704 | N-抛光 | 位错密度:1~3 x 106 cm-2 | 100 | $300 | ||
BK2020081704-05 | BK2020081704 | N-抛光 | 位错密度:5~9 x 105 cm-2 | 100 | $400 | ||
BK2020081704-06 | BK2020081704 | N-抛光 | 位错密度:1~5 x 105 cm-2 | 100 | $700 | ||
BK2020081704-07 | BK2020081704 | Double-抛光 | 位错密度:1~3 x 106 cm-2 | 100 | $340 | ||
BK2020081704-08 | BK2020081704 | Double-抛光 | 位错密度:5~9 x 105 cm-2 | 100 | $440 | ||
BK2020081704-09 | BK2020081704 | Double-抛光 | 位错密度:1~5 x 105 cm-2 | 100 | $740 |
|
Reminder: Beijing Beike New Material Technology Co., Ltd. supplies products only for scientific research, not for humans |
All rights reserved © 2019 beijing beike new material Technology Co., Ltd 京ICP备16054715-2号 |