Product number | GaN-T-C-N-C50 |
Size | Ф50.8 ± 0.1 mm |
Thickness | 4.5±0.5 μm, 20±2 μm |
Crystal orientation | C-plane(0001) ± 0.5° |
Conductivity type | N-type(Si-doped) |
Resistivity (300 K) | < 0.05Ω·cm |
Carrier concentration | > 1x1018cm-3 |
Mobility | ~ 200cm2/V•s |
Dislocation density | Less than 5x108 cm-2(estimated by FWHMs of XRD) |
Substrate structure | GaN on sapphire (standard :SSP option:DSP) |
Effective area | >90% |
package |
Packaged in a class 100 clean room environment, in cassette of 25pcs or single container , under a nitrogen atmosphere. |
Warm tip: the products supplied by Beijing Beike Xincai Technology Co., Ltd. are only used for scientific research, not for human body |
Item ID | CAS | ID | Pack | Parameter | Stock | Make up | Price |
BK2020081713-01 | BK2020081713 | 单抛 | 4.5±0.5μm | 100 | $140 | ||
BK2020081713-02 | BK2020081713 | 单抛 | 20±2μm | 100 | $270 | ||
BK2020081713-03 | BK2020081713 | 双抛 | 4.5±0.5μm | 100 | $150 | ||
BK2020081713-04 | BK2020081713 | 双抛 | 20±2μm | 100 | $280 |
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Reminder: Beijing Beike New Material Technology Co., Ltd. supplies products only for scientific research, not for humans |
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