The above price is a reference price, please consult the technology for detailed quotation.
Substrate: 300nm oxide silicon wafer, 5um equidistant gold electrodes
Structure: First lift off a single layer of MoS2 to a designated position, and then transfer a few layers of TiS3 titanium trisulfide to the MoS2 position to form three regions of MoS2-TiS3/MoS2-TiS3. The FET properties can be tested separately for the two materials and the heterojunction alone.
Warm tip: the products supplied by Beijing Beike Xincai Technology Co., Ltd. are only used for scientific research, not for human body |
Item ID |
CAS |
ID |
Pack |
Parameter |
Stock |
Make up |
Price |
BK2022050603 |
|
BK2022050603 |
1片装 |
|
100 |
|
$937 |