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产品名称： 晶体种类： |
Bi2Te3 碲化铋 (1g) 拓扑绝缘体，红外材料 |
| 纯度： | >99.999 % |
| 表征方法： | EDS，SEM，Raman |
| 禁带宽度： | 0.3ev |
1，Yao, Jiandong, Zhaoqiang Zheng, and Guowei Yang. "All‐layered 2D optoelectronics: a high‐performance UV–vis–NIR broadband SnSe photodetector with Bi2Te3 topological insulator electrodes." Advanced Functional Materials 27.33 (2017): 1701823.
2，Mamur, Hayati, et al. "A review on bismuth telluride (Bi2Te3) nanostructure for thermoelectric applications." Renewable and Sustainable Energy Reviews 82 (2018): 4159-4169.
3，Ambrosi, Adriano, et al. "Exfoliation of layered topological insulators Bi2Se3 and Bi2Te3 via electrochemistry." ACS nano 10.12 (2016): 11442-11448.
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