2英寸氮化镓自支撑晶片（Si掺杂）

编号：BK2020081702

CAS号：

价格： 
￥17400


货号：BK2020081702-18

规格：

数量：

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详细介绍

2-inch Free-standing U-GaN Substrates
	Excellent level (S)		Production level (A)		Research level (B)		Dummy level (C)	Note: (1) Useable area: edge and macro defects exclusion (2) 3 points: the miscut angles of positions (2, 4, 5) are 0.35 ± 0.15°
	S-1	S-2	A-1	A-2
Dimension	50.8 ± 1 mm
Thickness	350 ± 25 μm
Orientation flat	(1-100) ± 0.5°, 16 ± 1 mm
Secondary orientation flat	(11-20) ± 3°, 8 ± 1 mm
Resistivity (300K)	< 0.05 Ω·cm for N-type (Si-doped; GaN-FS-C-N-C50)
TTV	≤ 15 μm
BOW	≤ 20 μm					≤ 40 μm
Ga face surface roughness	< 0.2 nm (polished) or < 0.3 nm (polished and surface treatment for epitaxy)
N face surface roughness	0.5 ~1.5 μm option: 1~3 nm (fine ground); < 0.2 nm (polished)
Package	Packaged in a cleanroom in single wafer container
Useable area	> 90%				>80%		>70%
Dislocation density	<9.9x10⁵ cm^-2	<3x10⁶cm^-2	<9.9x10⁵ cm^-2	<3x10⁶cm^-2	<3x10⁶cm^-2
Orientation：C plane (0001) off angle toward M-axis	0.35 ± 0.15°(5 points)		0.35 ± 0.15°(5 points)		0.35 ± 0.15°(3 points)
Macro defect density (hole)	0 cm2		< 0.3 cm ^-2		< 1 cm ^-2
Max size of macro defects			< 700 μm		< 2000 μm		< 4000 μm