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Single crystal silicon carbide substrate SiC





ID:BKMK1343
CAS:
price: $1300
Item ID:BKMK1343-04
specification:
Detailed

Name: Single crystal silicon carbide substrate SiC
Size: 2 inches
Crystal orientation: <0001>
4H-SiC
Double-sided polishing
Rough surface: <1nm
Thickness: 350±10 μm
High purity without doping
Class D film

Size: 2 inches
Crystal orientation: <0001>
4H-SiC
Double-sided polishing
Rough surface: <1nm
Thickness: 350±10 μm
Semi-insulating (vanadium doped)
Class D film

Size: 2 inches
Crystal orientation: <0001>
4H-SiC
Double-sided polishing
Rough surface: <1nm
Thickness: 350±10 μm
Conductivity (nitrogen doped)
Class D film

Size: 2 inches
Crystal orientation: <0001>
Main positioning edge: <10-10>
Rough surface: <1nm
Thickness: 330/430±10 μm
Level: Industrial Research Level



Warm tip: the products supplied by Beijing Beike Xincai Technology Co., Ltd. are only used for scientific research, not for human body

Item ID CAS ID Pack Parameter Stock Make up Price
BKMK1343-01 BKMK1343 2英寸 高纯不掺杂 100 $760
BKMK1343-02 BKMK1343 2英寸 半绝缘(掺钒) 100 $560
BKMK1343-03 BKMK1343 2英寸 导电型(掺氮) 100 $440
BKMK1343-04 BKMK1343 2英寸 工业研究级别 100 $1300
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