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MXenes-Max 2D transition metal carbonitride
MBene two-MAB-dimensional transition metal borides
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CVD TMDC 2D thin film / heterojunction
Perovskite material
Copper-doped modified lead apatite (LK 99 crystal powder)
2D material fiber/film
Two-dimensional material micro-nano processing - in situ testing
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Two-dimensional layered double hydroxide
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MXenes 2D transition metal carbonitride
MBene two-dimensional transition metal borides
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position： home > Product > Two-dimensional material micro-nano processing - in situ testing

Two-dimensional material micro-nano processing - in situ testing
Two dimensional material transfer system Heterojunction customization Customized wafer consumables Micro and nano devices
Electrode customization Transient absorption spectrum Monocrystalline silicon substrate GaN wafer
FET devices Two-dimensional material device Design and processing Photoelectric comprehensive test system
Photocurrent test system Spectrum test system
price
500元    501-1000元    1001-2000元    2000元以上

Photo ID/CAS Item ID Name/specification price

Mechanically exfoliated heterojunction BK20220506
  Mechanically exfoliated heterojunction
BK20220506-15 1片装单点拉曼测试
BK20220506-14 1片装PL Mapping扫描测试
BK20220506-13 1片装WS2/WSe2
BK20220506-12 1片装MoSe2/MoS2
BK20220506-11 1片装MoSe2/Gr
BK20220506-10 1片装WSe2/Gr
BK20220506-09 1片装WS2/Gr
BK20220506-08 1片装MoS2/Gr
BK20220506-07 1片装MoS2/WSe2
BK20220506-06 1片装MoS2/WS2
BK20220506-05 1片装WSe2/hBN
BK20220506-04 1片装MoSe2/hBN
BK20220506-03 1片装WS2/hBN
BK20220506-02 1片装MoS2/hBN
BK20220506-01 1片装黑磷/hBN
$ 937
Microfabricated electrode arrays and thin film arrays BK2022050604
  Microfabricated electrode arrays and thin film arrays
BK2022050604 1片装
$ 2250
MoS2/TiS3 Titanium Trisulfide Molybdenum Disulfide Heterojunction BK2022050603
  MoS2/TiS3 Titanium Trisulfide Molybdenum Disulfide Heterojunction
BK2022050603 1片装
$ 937
Black Phosphorus ReSe2 Heterojunction Devices, BP/ReSe2 BK2022050602
  Black Phosphorus ReSe2 Heterojunction Devices, BP/ReSe2
BK2022050602 1片装
$ 937
Heterojunction customization BK2022050601
  Heterojunction customization
BK2022050601-04 转移曲线/每个材料
BK2022050601-03 IV测试/每个材料
BK2022050601-02 Raman测试数据/每个点
BK2022050601-01 异质结FET器件
$ 937
Gold-plated coordinate silicon wafer Gold-plated digital marking silicon wafer BK2021121038
  Gold-plated coordinate silicon wafer Gold-plated digital marking silicon wafer
BK2021121038 300nm氧化层硅片，镀金50nm坐标硅片
$ 375
Transient absorption BK20201103
  Transient absorption
$ 0
2 inch aluminum nitride thick film wafer BK2020081715
  2 inch aluminum nitride thick film wafer
BK2020081715-08 双抛厚度：[4,5)μm
BK2020081715-07 双抛厚度：[3,4)μm
BK2020081715-06 双抛厚度：[2,3)μm
BK2020081715-05 双抛厚度：[1,2)μm
BK2020081715-04 单抛厚度：[4,5)μm
BK2020081715-03 单抛厚度：[3,4)μm
BK2020081715-02 单抛厚度：[2,3)μm
BK2020081715-01 单抛厚度：[1,2)μm
$ 500
2-inch GaN thick film wafer (Mg doped) BK2020081714
  2-inch GaN thick film wafer (Mg doped)
BK2020081714-02 双抛4.5±0.5μm
BK2020081714-01 单抛4.5±0.5μm
$ 180
2-inch GaN thick film wafer (Si doped) BK2020081713
  2-inch GaN thick film wafer (Si doped)
BK2020081713-04 双抛20±2μm
BK2020081713-03 双抛4.5±0.5μm
BK2020081713-02 单抛20±2μm
BK2020081713-01 单抛4.5±0.5μm
$ 140
2-inch GaN thick film wafer (undoped) BK2020081712
  2-inch GaN thick film wafer (undoped)
BK2020081712-04 双抛20±2μm
BK2020081712-03 双抛4.5±0.5μm
BK2020081712-02 单抛20±2μm
BK2020081712-01 单抛4.5±0.5μm
$ 120
4-inch GaN thick film wafer (Si doped) BK2020081711
  4-inch GaN thick film wafer (Si doped)
BK2020081711-02 20±2μm
BK2020081711-01 4.5±0.5μm
$ 660
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