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MXenes-Max 2D transition metal carbonitride
MBene two-MAB-dimensional transition metal borides
MOFs metal organic framework compound
COFs covalent organic compound
Bioluminescent dyes
Aerogels
CVD TMDC 2D thin film / heterojunction
Perovskite material
Copper-doped modified lead apatite (LK 99 crystal powder)
2D material fiber/film
Two-dimensional material micro-nano processing - in situ testing
Basic magnetic beads, immunomagnetic beads, protein purification magnetic beads, nucleic acid extraction magnetic beads
Nucleic acid extraction kit
High-entropy materials
Biological nanomaterials
Nanocellulose
AIE luminescent material
Silane Bismuthene Borene Tellurene Phosphorene Graphyne
Binary CVD TMDC crystal/powder/dispersion
Ternary CVD TMDC crystal/powder/dispersion
Graphene and carbon nanomaterials
High-performance battery materials
Carbon nanotube/fullerene series
Nano/micron powder material and AAO template
Nanowires
Molecular sieve
Ionic liquid
QDS
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Metal nanomaterials
Mesoporous materials
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Two-dimensional layered double hydroxide
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MXenes 2D transition metal carbonitride
MBene two-dimensional transition metal borides
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Material testing and consumables
Micro grid Characteristic laboratory Material preparation Metallography and heat treatment
Organizational structure analysis Chemical property test Physical performance test Mechanical property test
Common laboratory substrate consumables Common consumables for imported Laboratory
price
500元    501-1000元    1001-2000元    2000元以上

Photo ID/CAS Item ID Name/specification price

4 inch silicon dioxide wafer1 BK2020042504
  4 inch silicon dioxide wafer1
BK2020042504-42 P<100> 单氧0.001--0.005Ω·cm 500h 300nm
BK2020042504-41 P<100> 双氧0.001--0.005Ω·cm 500h 300nm
BK2020042504-40 P<100> 双氧>5000Ω·cm 500h 300nm
BK2020042504-39 P<100> 双氧1--10Ω·cm 525h 300nm
BK2020042504-38 P<100> 单氧1--10Ω·cm 500h 300nm
BK2020042504-37 P<100> 单氧0.001--0.005Ω·cm 500h 285nm
BK2020042504-36 P<100> 双氧0.001--0.005Ω·cm 500h 285nm
BK2020042504-35 P<100> 双氧1--10Ω·cm 525h 285nm
BK2020042504-34 P<100> 单氧1--10Ω·cm 500h 285nm
BK2020042504-33 P<100> 双氧1--10Ω·cm 525h 200nm
BK2020042504-32 P<100> 双氧0.001--0.005Ω·cm 525h 200nm
BK2020042504-31 P<100> 双氧1--10Ω·cm 500h 200nm
BK2020042504-30 P<100> 单氧0.001--0.005Ω·cm 525h 200nm
BK2020042504-29 P<100> 单氧1--10Ω·cm 525h 200nm
BK2020042504-28 P<100> 双氧1--10Ω·cm 525h 100nm
BK2020042504-27 P<100> 单氧1--10Ω·cm 525h 100nm
BK2020042504-26 P<100> 单氧0.001--0.005Ω·cm 525h 100nm
BK2020042504-25 P<100> 单氧1--10Ω·cm 500h 50nm
BK2020042504-24 P<100> 单氧0.001-0.005Ω·cm 500h 20nm
$ 85
6 inch single crystal silicon wafer1 BK2020042505
  6 inch single crystal silicon wafer1
BK2020042505-23 二氧化硅P 100 0.001-0.005Ω·cm 500μm
BK2020042505-22 二氧化硅P 100 0.001-0.005Ω·cm 500μm
BK2020042505-21 二氧化硅P 100 1--10Ω·cm 675μm
$ 125
6 inch single crystal silicon wafer BK2020042506
  6 inch single crystal silicon wafer
BK20200425-22 二氧化硅P 100 0.001-0.005Ω·cm 500μm
BK20200425-21 二氧化硅P 100 1--10Ω·cm 675μm
BK2020042506-20 双抛P 100 1--50Ω·cm 450μm
BK2020042506-19 双抛P 100 <0.0015Ω·cm 1000μm
BK2020042506-18 双抛P 100 0--20Ω·cm 650μm
BK2020042506-17 双抛P 100 0--20Ω·cm 550μm
BK2020042506-16 双抛N 100 <1Ω·cm 340μm
BK2020042506-15 单抛区熔本征 100 630--1200Ω·cm 675μm
BK2020042506-14 单抛P 100 1--50Ω·cm 675μm
BK2020042506-13 单抛N 100 0.8--2Ω·cm 675μm
BK2020042506-12 单抛P 100 1--100Ω·cm 610-640μm
BK2020042506-11 单抛N 111 10--50Ω·cm 500μm
BK2020042506-10 单抛N 111 >10Ω·cm 1000μm
BK2020042506-09 单抛N 100 1--10Ω·cm 675μm
BK2020042506-08 单抛P 100 0.001--0.009Ω·cm 525μm
BK2020042506-07 单抛P 100 0.001-0.009Ω·cm 500μm
BK2020042506-06 单抛P 100 10--20Ω·cm 650μm
BK2020042506-05 单抛P 100 1--10Ω·cm 650μm
BK2020042506-04 单抛P 100 0.001--0.009Ω·cm 650μm
BK2020042506-03 单抛P 100 >1Ω·cm 650μm
$ 47
4 inch single crystal silicon wafer 2 BK2020042400
  4 inch single crystal silicon wafer 2
BK20200424-42 双抛N 111 10--25Ω·cm 470μm
BK20200424-41 双抛N 100 10--20Ω·cm 200μm
BK2020042400-40 双抛N 100 20--30Ω·cm 470μm
BK2020042400-39 双抛N 100 >1Ω·cm 500μm
BK2020042400-38 双抛N 100 0.001--0.009Ω·cm 525μm
BK2020042400-37 双抛P 100 1--10Ω·cm 2000μm
BK2020042400-36 双抛P 100 <0.0015Ω·cm 3000μm
BK2020042400-35 双抛P 100 1--10Ω·cm 160μm
BK2020042400-34 双抛P 100 0.01--0.02Ω·cm 200μm
BK2020042400-33 双抛P 100 1--10Ω·cm 200μm
BK2020042400-32 双抛P 100 >1Ω·cm 400μm
BK2020042400-31 双抛P 100 >10Ω·cm 500μm
BK2020042400-30 双抛P 100 0.001--0.005Ω·cm 470μm
BK2020042400-29 单抛P 111 0.01--0.015Ω·cm 525μm
BK2020042400-28 单抛P 111 8--13Ω·cm 400μm
BK2020042400-27 单抛P 100 <0.0015Ω·cm 240μm
BK2020042400-26 单抛P 100 1--20Ω·cm 525μm
BK2020042400-25 单抛P 100 20--50Ω·cm 525μm
BK2020042400-24 单抛P 100 1--5Ω·cm 240μm
BK2020042400-23 单抛P 100 1--10Ω·cm 200μm
$ 42
4 inch single crystal silicon wafer1 BK2020042411
  4 inch single crystal silicon wafer1
BK20200424-24 单抛P 100 20--50Ω·cm 525μm
BK20200424-23 单抛P 100 1--5Ω·cm 240μm
BK20200424-22 单抛P 100 1--10Ω·cm 200μm
BK20200424-21 单抛P 100 0.1--0.5Ω·cm 500μm
BK2020042411-20 单抛P 100 0.01--0.05Ω·cm 500μm
BK2020042411-19 单抛P 100 0.001--0.005Ω·cm 500μm
BK2020042411-18 单抛P 100 0.001--0.005Ω·cm 375μm
BK2020042411-17 单抛P 100 0.1--0.9Ω·cm 500μm
BK2020042411-16 单抛P 100 <0.0015Ω·cm 3000μm
BK2020042411-15 单抛P 100 0.01--0.02Ω·cm 2000μm
BK2020042411-14 单抛P 100 0.001--0.009Ω·cm 1000μm
BK2020042411-13 单抛P 110 1-10Ω·cm 500μm
BK2020042411-12 单抛N 111 0.002-0.003Ω·cm 550μm
BK2020042411-11 单抛N 111 10--25Ω·cm 500μm
BK2020042411-10 单抛N 111 20--60Ω·cm 500μm
BK2020042411-09 单抛N 111 10--25Ω·cm 400μm
BK2020042411-08 单抛N 100 3.6--5.1Ω·cm 1000μm
BK2020042411-07 单抛N 100 14--16Ω·cm 350μm
BK2020042411-06 单抛N 100 1--20Ω·cm 525μm
BK2020042411-05 单抛N 100 5--15Ω·cm 400μm
$ 32
2 inch single crystal silicon wafer BK2020042300
  2 inch single crystal silicon wafer
BK20200423-35 双抛P 100 0.01--0.05Ω·cm 650μm
BK20200423-34 双抛P 111 3--6Ω·cm 300μm
BK20200423-33 双抛N 100 1--10Ω·cm 270μm
BK20200423-32 双抛P 110 1--10Ω·cm 450μm
BK20200423-31 单抛P 100 0.01-0.05Ω·cm 270μm
BK20200423-34 单抛P 100 0.01-0.05Ω·cm 400μm
BK20200423-33 单抛P 100 0.01-0.05Ω·cm 500μm
BK20200423-32 单抛P 100 0.01-0.05Ω·cm 200μm
BK20200423-31 单抛P 100 1--10Ω·cm 500μm
BK2020042300-30 单抛P 100 0.1-0.2Ω·cm 300μm
BK2020042300-29 单抛P 100 0.01-0.05Ω·cm 300μm
BK2020042300-28 单抛P 100 1--10Ω·cm 300μm
BK2020042300-27 单抛P 100 0.01-0.05Ω·cm 5000μm
BK2020042300-26 单抛P 100 0.01-0.05Ω·cm 3000μm
BK2020042300-25 单抛P 100 <0.01Ω·cm 2000μm
BK2020042300-24 单抛P 100 1--10Ω·cm 2000μm
BK2020042300-23 单抛P 100 <0.0015Ω·cm 1000μm
BK2020042300-22 单抛P 111 1--10Ω·cm 100μm
BK2020042300-21 单抛P 111 1--10Ω·cm 280μm
BK2020042300-20 单抛P 111 <0.0015Ω·cm 350μm
$ 16
1 inch single crystal silicon wafer BK2020042311
  1 inch single crystal silicon wafer
BK2020042311-10 单抛P 100 1--10Ω·cm 500μm
BK2020042311-09 本征双抛P 100 >3000Ω·cm 470μm
BK2020042311-08 本征双抛100 >1000Ω·cm 2000μm
BK2020042311-07 双抛P 100 1--20Ω·cm 400μm
BK2020042311-06 双抛P 100 1--20Ω·cm 1900μm
BK2020042311-05 单抛P 100 <0.0015Ω·cm 400
BK2020042311-04 单抛P 100 1--20Ω·cm 1950μm
BK2020042311-03 单抛P 100 <0.01Ω·cm 1000μm
BK2020042311-02 双抛P 100 1--20Ω·cm 100μm
BK2020042311-01 单抛本征P 100 >4000Ω·cm 500μm
$ 16
Mechanical property testing laboratory BK2020011871
  Mechanical property testing laboratory
BK2020011871-01 力学性能特色服务
$ 0
Comprehensive physical property testing laboratory BK2020011872
  Comprehensive physical property testing laboratory
BK2020011872-04 其它物理性能测试
BK2020011872-03 材料热学性能
BK2020011872-02 材料磁学性能
BK2020011872-01 材料电学性能
$ 0
Plastic precision slice BK2020011873
  Plastic precision slice
BK2020011873-01 陶瓷、金属、塑料切片
$ 0
High temperature sintering and densification BK2020011874
  High temperature sintering and densification
BK2020011874-03 放电等离子烧结SPS
BK2020011874-02 热压烧结
BK2020011874-01 烧结
$ 0
Rolling mill BK2020011875
  Rolling mill
BK2020011875-03 热轧
BK2020011875-02 板材成形
BK2020011875-01 冷轧
$ 0
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